Title :
Application of Polycrystalline SiGe for Gain Control in SiGe Heterojunction Bipolar Transistors
Author :
Kunz, V.D. ; de Groot, C.H. ; Hall, S. ; Anteney, I.M. ; Abdul-Rahim, A.I. ; Ashburn, P.
Author_Institution :
University of Southampton, United Kingdom
fDate :
24-26 September 2002
Keywords :
Annealing; Bipolar transistors; CMOS technology; Degradation; Delay; Doping; Gain control; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194897
