DocumentCode :
1921744
Title :
On the silicon nitride film formation from N/sub 2/-SiH/sub 4/ electron cyclotron resonance plasma
Author :
Kim, Yong-Jin ; Kim, Jung-Hyung ; Song, Sun-Kyu ; Chang, Hong-Young
Author_Institution :
Dept. of Phys., KAIST, Yusong-gu, Taejon, Korea
fYear :
1993
fDate :
7-9 June 1993
Firstpage :
99
Abstract :
Summary form only given, as follows. Silicon nitride (SiN/sub x/) thin film was deposited onto a 3-inch silicon wafer using an electron cyclotron resonance (ECR) plasma apparatus. The thin films which were deposited by changing the SiH/sub 4N/sub 2/ gas flow rate ratio at 1.5 m Torr without substrate heating were analyzed using X-ray photoelectron spectroscopy and ellipsometer measurements. Silicon nitride thin films prepared by the ECR plasma chemical vapor deposition method at low substrate temperature (<100/spl deg/C) exhibited excellent physical and electrical properties. Very uniform and good-quality silicon nitride thin films were obtained.
Keywords :
plasma CVD; 1.5 mtorr; 100 degC; ECR plasma; N/sub 2/-SiH/sub 4/; SiN/sub x/; X-ray photoelectron spectroscopy; electrical properties; electron cyclotron resonance plasma; ellipsometer measurements; gas flow rate ratio; physical properties; plasma chemical vapor deposition; thin film; Electrons; Plasma measurements; Plasma properties; Plasma temperature; Plasma x-ray sources; Semiconductor films; Semiconductor thin films; Silicon compounds; Sputtering; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 1993. IEEE Conference Record - Abstracts., 1993 IEEE International Conference on
Conference_Location :
Vancouver, BC, Canada
ISSN :
0730-9244
Print_ISBN :
0-7803-1360-7
Type :
conf
DOI :
10.1109/PLASMA.1993.593093
Filename :
593093
Link To Document :
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