High-performance a-Si: H TFT for Large-Area AMLCDs

We have fabricated high performance hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) for large-area active-matrix liquid crystal displays (AMLCDs) from high deposition-rate plasma-enhanced chemical vapor deposition (PECVD) materials. This a-Si:H TFT has a high field-effect mobility (1.45±0.05 cm²/Vs), low threshold voltage (2.0±0.2 V), high ON/OFF-current ratio (of more than 10⁷) and sharp subthreshold slope (0.3±0.03 V/decade). The electrical behavior of these devices have been accurately modeled with a two-dimensional simulator. The effects ofthe density-of-states of a-Si:H and source/drain series resistances have been fully considered in our model, and we have demonstrated a good agreement between our theoretical and experimental a-Si:H TFT data.