DocumentCode :
1921797
Title :
Study of Self Heating Effects on Future SOI Devices Operation
Author :
Yachou, Driss ; Gautier, Jacques
Author_Institution :
LETI (CEA - Technologies Avancées) DMEL - CENG, BP85X, 38054 Grenoble Cedex 9, France. Fax: (33)76885183
fYear :
1994
fDate :
11-15 Sept. 1994
Firstpage :
787
Lastpage :
790
Abstract :
In this work we give a thermal analytical model that is suitable for taking into account the lattice temperature in parameters extraction. This thermal model is used to estimate the self heating effects on future SOI devices operation.
Keywords :
Analytical models; Heating; Lattices; Parameter extraction; Power transmission lines; Semiconductor films; Silicon; Temperature; Thermal conductivity; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
Print_ISBN :
0863321579
Type :
conf
Filename :
5435838
Link To Document :
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