A low-power direct conversion receiver module for C-band wireless applications

Author

Matinpour, B. ; Sutono, A. ; Laskar, J.

Author_Institution

Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA

Volume

1

fYear

2001

fDate

20-24 May 2001

Firstpage

567

Abstract

In this paper, we present the first low-power direct conversion receiver module for broadband wireless applications at C-band. This module is composed of a highly-integrated receiver MMIC fabricated in a 0.6 /spl mu/m commercial GaAs MESFET process mounted on a LTCC substrate with an integrated multi-layer three-dimensional front-end filter. With only 25 mW of DC power consumption, this receiver module demonstrates conversion gain of 9 dB, NF of 4.7 dB, DC offset below -70 dBm, IIP2 of +30 dBm, and IIP3 of -10 dBm at 5.8 GHz.

Keywords

MESFET integrated circuits; band-pass filters; field effect MMIC; gallium arsenide; low-power electronics; microwave filters; microwave links; modules; passive filters; radio receivers; strip line filters; 0.6 micron; 25 mW; 4.7 dB; 5.8 GHz; 9 dB; C-band wireless applications; GaAs; GaAs MESFET process; LTCC substrate; SHF; broadband wireless applications; direct conversion receiver module; integrated multilayer 3D front-end filter; low-power receiver module; receiver MMIC; stripline bandpass filter; Band pass filters; Ceramics; Gallium arsenide; Image converters; MMICs; Microelectronics; Microwave filters; Stripline; Substrates; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.966957

Filename

966957