DocumentCode :
1921953
Title :
Extraction Method for the Impact-Ionization Multiplication Factor in Silicon at Large Operating Temperatures
Author :
Gnani, E. ; Reggiani, S. ; Rudan, M. ; Baccarani, G.
Author_Institution :
ARCES-DEIS, University of Bologna, Italy
fYear :
2002
fDate :
24-26 September 2002
Firstpage :
227
Lastpage :
230
Keywords :
Discrete event simulation; Electric variables measurement; Electrons; Impact ionization; Numerical simulation; Predictive models; Semiconductor devices; Silicon; Temperature distribution; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194911
Filename :
1503841
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1921953
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