• DocumentCode
    1922011
  • Title

    Evaluation of Interface Trap Density in a SiGe/Si Heterostructure Using a Charge Pumping Technique and Correlation Between the Trap Density and Low Frequency Noise in SiGe-Channel pMOSFETs

  • Author

    Tsuchiya, Toshiaki ; Imada, Yuji ; Murota, Junichi

  • Author_Institution
    Shimane University, Japan
  • fYear
    2002
  • fDate
    24-26 September 2002
  • Firstpage
    239
  • Lastpage
    242
  • Keywords
    Charge pumps; Current measurement; Density measurement; Frequency measurement; Germanium silicon alloys; Low-frequency noise; MOSFETs; Noise measurement; Pulse measurements; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
  • Print_ISBN
    88-900847-8-2
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2002.194914
  • Filename
    1503844
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1922011