Effect of Ch4/H2/Co2 Reactive Ion Etching & O2 Plasma Cleaning of InP on MOCVD Overgrown Layers

A method for removing damage imposed upon substrates during Reactive Ion Etching (RIE) is described. The technique involves using a finishing low power etch after the main etch. It is seen that there is a limit to the amount of carbon dioxide that may be used in etchant mixtures, if damage to the substrate is to be avoided. An oxygen plasma clean may be used to remove organic residue after RIE. However, time and power of the clean must be kept to a minimum if degradation of the substrate is to be avoided.