Observation of THz radiation from higher-order plasmon modes in /spl delta/-doped AlGaAs-GaAs single quantum wells

Author

Sekine, N. ; Vosseburger, M. ; Yamanaka, K. ; Hirakawa, K. ; Haring Bolivar, P. ; Kurz, H.

Author_Institution

Inst. of Ind. Sci., Tokyo Univ., Japan

fYear

1998

fDate

8-8 May 1998

Firstpage

57

Lastpage

58

Abstract

Summary form only given.The THz radiation from 2D plasmons in AlGaAs-GaAs single quantum wells (SQWs) has been investigated by time-resolved THz emission spectroscopy. For the case of a /spl delta/-doped thin-barrier sample, up to fifth-order plasmon modes were clearly observed for the first time to our knowledge. The observed plasmon dispersion was in excellent agreement with the results of the full grating theory. Furthermore, we investigated the effect of the excitation photon energy on the THz emission intensity.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; microwave photonics; plasmons; semiconductor doping; semiconductor quantum wells; submillimetre wave generation; submillimetre wave spectra; /spl delta/-doped AlGaAs-GaAs single quantum wells; /spl delta/-doped thin-barrier sample; 2D plasmons; AlGaAs-GaAs; THz emission intensity; THz radiation; excitation photon energy; fifth-order plasmon modes; full grating theory; higher-order plasmon modes; observed plasmon dispersion; time-resolved THz emission spectroscopy; Frequency; Gallium arsenide; Gratings; Laser mode locking; Nanostructures; Performance analysis; Plasmons; Solid state circuits; Spectroscopy; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-541-2

Type

conf

DOI

10.1109/IQEC.1998.680121

Filename

680121