DocumentCode
1923029
Title
Large Signal Excitation Measurement Techniques for RTS Noise in MOSFETs
Author
Hoekstra, E.
Author_Institution
MESA+ Inst., Twente Univ., Enschede
Volume
2
fYear
2005
fDate
21-24 Nov. 2005
Firstpage
1863
Lastpage
1866
Abstract
This paper introduces large signal excitation measurement techniques to analyze random telegraph signal (RTS) noise originating from oxide-traps in MOSFETs. The paper concentrates on the trap-occupancy, which relates directly to the generated noise. The proposed measurement technique makes trap-occupancy observation possible for every bias-situation, including the OFF-state of the transistor
Keywords
MOSFET; hole traps; random noise; semiconductor device noise; MOSFET; RTS noise; bias situation; noise generation; oxide traps; random telegraph signal; signal excitation; transistor OFF-state; trap occupancy; Circuit noise; Electron traps; Fluctuations; Frequency; History; Low-frequency noise; MOSFETs; Measurement techniques; Semiconductor device noise; Telegraphy; LF noise; Large Signal Excitation; MOSFET; Random Telegraph Signal (RTS) noise; Transient;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer as a Tool, 2005. EUROCON 2005.The International Conference on
Conference_Location
Belgrade
Print_ISBN
1-4244-0049-X
Type
conf
DOI
10.1109/EURCON.2005.1630344
Filename
1630344
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