• DocumentCode
    1923979
  • Title

    Microwave Performance of HFETs on Metamorphic In0.7Al0.3As/In0.8Ga0.2As on GaAs Substrates

  • Author

    Karlsson, Christer ; Rorsman, Niklas ; Wang, Shumin ; Olsson, Eva ; Andersson, Thorvald G. ; Zirath, Herbert

  • Author_Institution
    Department of Microwave Technology,Chalmers University of Technology S-412 96 Göteborg Sweden
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    881
  • Lastpage
    884
  • Abstract
    Heterostructure Field-Effect Transistors (HFETs) on In0.7Al0.3As/ In0.8Ga0.2As heterostructures grown on GaAs substrates have been fabricated and characterized. The lattice mismatch is accommodated by a linearly graded InxAlyGa1-x-yAs buffer. The Hall mobility is 9700 and 39400 cm2/Vs at room temperature and 77 K, respectively. An intrinsic transit frequency, fT, of 250 GHz indicates high electron velocity in the In0.8Ga0.2As channel. This is, to our knowledge, the highest fT obtained for an InxGa1-xAs HFET with x≫0.5 on GaAs substrates.
  • Keywords
    Atomic force microscopy; Gallium arsenide; HEMTs; Hall effect; Lattices; MODFETs; Microwave technology; Substrates; Temperature; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5435944
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1923979