E-PHEMT, single supply, high efficient power amplifiers for GSM and DCS applications

Author

Shuyun Zhang ; Jiang Cao ; McMorrow, R.

Author_Institution

Alpha Ind. Inc., Woburn, MA, USA

Volume

2

fYear

2001

fDate

20-24 May 2001

Firstpage

927

Abstract

This paper presents power amplifier MMICs for GSM and DCS applications using a newly developed 0.5 /spl mu/m enhancement mode power PHEMT process. An Automatic Bias Control (ABC) circuit is implemented on-chip to achieve high PAE. A Voltage Variable Attenuator (VVA) is also designed and fabricated on-chip to adjust the input power level and the overall gain. Under a low single supply voltage of 3.2 V the GSM PA provides 35 dBm output power with 55% PAE, and the DCS PA delivers 33 dBm with 40% PAE. Both chips are housed in 20-pin 4 mm/spl times/4 mm Miniature Leadless Packages (MLP).

Keywords

HEMT integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; cellular radio; field effect MMIC; power integrated circuits; 0.5 micron; 3.2 V; 40 percent; 55 percent; DCS applications; E-PHEMT process; GSM applications; automatic bias control circuit; enhancement mode power PHEMT process; high PAE; high efficiency power amplifiers; miniature leadless packages; onchip bias control circuit; onchip variable attenuator; power amplifier MMICs; single supply configuration; voltage variable attenuator; Automatic control; Circuits; Distributed control; GSM; High power amplifiers; MMICs; PHEMTs; Power amplifiers; Power supplies; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967043

Filename

967043