DocumentCode :
1924523
Title :
An Approach for Pre-Silicon Power Modeling
Author :
Agrawal, Prashant ; Ramakrishna, Sudhir ; Oke, Ajit N. ; Vijay, Saurabh
Author_Institution :
CSE, Indian Inst. of Technol., Kharagpur
fYear :
2007
fDate :
5-7 March 2007
Firstpage :
99
Lastpage :
103
Abstract :
Accurate estimation of power in pre-silicon is very important and finally to validate this against post-silicon measurement is essential throughout product lifecycle. Thermal design power (TDP) estimates are used to design package thermal solutions. In this paper a modeling approach for dynamic power estimation under TDP conditions is proposed. In this approach, separate models are built for each partition in the design. The model uses only bandwidth and the effective toggle rate of the input data for estimating the total switched capacitance and dynamic power. The model takes into account the effect of cross-coupling capacitance on dynamic power. The results obtained from the model are within 7% of the measured data
Keywords :
integrated circuit design; integrated circuit modelling; integrated circuit packaging; thermal management (packaging); dynamic power estimation; post-silicon measurement; pre-silicon power modeling; product lifecycle; switched capacitance; thermal design power; thermal package design; Bandwidth; Batteries; Capacitance; Circuit simulation; Cooling; Packaging; Power dissipation; Power system modeling; Silicon; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computing: Theory and Applications, 2007. ICCTA '07. International Conference on
Conference_Location :
Kolkata
Print_ISBN :
0-7695-2770-1
Type :
conf
DOI :
10.1109/ICCTA.2007.26
Filename :
4127350
Link To Document :
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