Liquid Phase Deposition (LPD) of Silicon Oxide Near Room Temperature

In this paper a new process for deposition of silicon oxide near room temperature is presented. Electrical measurements of the annealed oxide yield interface state densities of Dit = 1×10¹⁰ cm^-2 eV^-1 and fixed positive charge densities of Nf = 1×10¹¹ cm^-2. Characterization of the deposited oxide by ellipsometry results in a good refractive index (1.40-1.45). The low P-etch-rate (0.7-1.4 nm/s) shows its dense structure. These values prove the excellent quality of the deposited oxide. Additionally, deposition on mesas of silicon manifest the conformity of the process.