DocumentCode :
1925098
Title :
Characteristics of Inaias/ingaasp Quantum-Well Hemts
Author :
Hong, W-P. ; Bhat, R. ; Hayes, J.R. ; Chang, G.K. ; Nguyen, C. ; Koza, M.
Author_Institution :
Bellcore, Red Bank, NJ
fYear :
1991
fDate :
17-19 June 1991
Keywords :
HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MISFETs; MODFETs; Photonic band gap; Quantum well devices; Quantum wells; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
Type :
conf
DOI :
10.1109/DRC.1991.664689
Filename :
664689
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1925098
