Maximum switching frequency characterization of 4.5kV–400A SiC-PiN diode and Si-IEGT hybrid pair power module

Author

Takao, Kazuto ; Wada, Kazuyoshi ; Kyungmin Sung ; Mastuoka, Yuji ; Tanaka, Yuichi ; Nishizawa, Shinichi ; Ota, Chiharu ; Kanai, Teruto ; Shinohe, Takashi ; Ohashi, H.

Author_Institution

Corp. R&D Center, Toshiba Corp., Kawasaki, Japan

fYear

2013

fDate

15-19 Sept. 2013

Firstpage

1570

Lastpage

1576

Abstract

The maximum switching frequency of a 4.5 kV-400 A SiC-PiN diode and Si-IEGT hybrid pair module has been analyzed from the viewpoints of cooling capacity of the hybrid pair module and the minimum pulse width of the PWM signal. In the developed hybrid pair module, a direct water cooling type heat sink is employed to enhance the cooling capacity. It found that the developed 4.5 kV-400 A hybrid pair module could be operate at 10 kHz PWM switching frequency with the peak current of 110 A and the dc voltage of 2.5 kV. In this operating condition, the power losses of the Si-IEGT and SiC-PiN diode in the hybrid pair module are 2380W and 100 W, respectively.

Keywords

PWM power convertors; elemental semiconductors; heat sinks; modules; p-i-n diodes; power field effect transistors; silicon; silicon compounds; wide band gap semiconductors; PWM signal; PWM switching frequency; Si; Si-IEGT hybrid pair power module; SiC; SiC-PiN diode; cooling capacity; current 400 A; direct water cooling type heat sink; frequency 10 kHz; hybrid pair module; maximum switching frequency characterization; power 100 W; power 2380 W; power losses; voltage 2.5 kV; voltage 4.5 kV; Cooling; Logic gates; Resistance; Silicon; Switches; Switching frequency; Water heating;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2013 IEEE

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/ECCE.2013.6646892

Filename

6646892