DocumentCode
1925179
Title
27 mΩ-cm2, 1.6 kV power DiMOSFETs in 4H-SiC
Author
Ryu, Sei-Hyung ; Agarwal, Anant ; Richmond, James ; Palmour, John ; Saks, Nelson ; Williams, John
Author_Institution
Cree Inc., Durham, NC, USA
fYear
2002
fDate
2002
Firstpage
65
Lastpage
68
Abstract
We report on the characteristics of large area (3.3 × 3.3 mm2) high voltage 4H-SiC DiMOSFETs. The MOSFETs show a peak MOS channel mobility of 22 cm2/V·s and a threshold voltage of 8.5 V at room temperature. The DiMOSFETs exhibit an on-resistance of 27 mΩ·cm2 at room temperature. The devices block approximately 1.6 kV at room temperature. Stable avalanche characteristics at approximately 2.4 kV are observed on smaller devices. An on-current of 20 A is measured on a 0.103 cm2 device. High switching speed is also demonstrated. This suggests that the devices are ideal for high voltage, high frequency, low loss switching applications.
Keywords
avalanche breakdown; carrier mobility; power MOSFET; power semiconductor switches; silicon compounds; wide band gap semiconductors; 1.6 kV; 2.4 kV; 20 A; 4H-SiC; 8.5 V; SiC; high voltage MOSFETs; large area MOSFETs; low loss switching; on-current; on-resistance; peak MOS channel mobility; power DiMOSFETs; stable avalanche characteristics; switching speed; threshold voltage; Area measurement; Electrical resistance measurement; MOSFET circuits; Pulse measurements; Space vector pulse width modulation; Temperature measurement; Testing; Threshold voltage; Virtual manufacturing; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN
0-7803-7318-9
Type
conf
DOI
10.1109/ISPSD.2002.1016172
Filename
1016172
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