Extended (180 V) voltage in 0.6 μm thin-layer-SOI A-BCD3 technology on 1 μm BOX for display, automotive and consumer applications

Author

Ludikhuize, A.W. ; van der Pol, J.A. ; Heringa, A. ; Padiy, A. ; Ooms, E.R. ; van Kessel, P. ; Hessels, G.J.J. ; Swanenberg, M.J. ; van Velzen, B. ; van der Vlist, H. ; Egbers, J.H.H.A. ; Stoutjesdijk, M.

Author_Institution

Philips Res., Eindhoven, Netherlands

fYear

2002

fDate

2002

Firstpage

77

Lastpage

80

Abstract

In this paper the extension to 180 V of a compact 0.6 μm Silicon-on-Insulator BCD-technology on 1 μm Buried Oxide is discussed. DMOS performance (n- and p-type) at 180 V has been simulated after calibration on 120 V devices and first experimental results are given. Also the feasibility of milli-Ohm power devices in three level power metal without Cu plating is demonstrated.

Keywords

automotive electronics; consumer electronics; power MOSFET; semiconductor device metallisation; silicon-on-insulator; 0.6 micron; 1 micron; 120 V; 180 V; BOX; DMOS performance; Si; automotive applications; calibration; consumer applications; display applications; milli-Ohm power devices; thin-layer-SOI A-BCD3 technology; three level power metal; Batteries; EPROM; Electric breakdown; Plasma displays; Random access memory; Routing; Scanning probe microscopy; Silicon devices; Stability; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

Print_ISBN

0-7803-7318-9

Type

conf

DOI

10.1109/ISPSD.2002.1016175

Filename

1016175