Impact of BiCMOS technology on SRAM circuit design

Author

Fung, P. Kuen ; Tran, Hiep V. ; Scott, David B.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1989

fDate

2-4 Oct 1989

Firstpage

310

Lastpage

313

Abstract

The BiCMOS design techniques used in the design of ECL (emitter-coupled logic) megabit and 256 K BiCMOS SRAMs are discussed. The topics covered include design issues with respect to ECL-to-CMOS-level translation, sense amplifier design, I/O interface issues, and the integration of bipolar devices into high-density, but traditionally CMOS-only circuits. The superior performance that BiCMOS has over CMOS with respect to temperature insensitivity is discussed

Keywords

BIMOS integrated circuits; VLSI; emitter-coupled logic; integrated circuit technology; integrated memory circuits; random-access storage; 1 Mbit; 256 kbit; BiCMOS design techniques; BiCMOS technology; ECL; ECL-to-CMOS-level translation; I/O interface; SRAM circuit design; design issues; emitter-coupled logic; integration of bipolar devices; performance; sense amplifier design; temperature insensitivity; BiCMOS integrated circuits; CMOS logic circuits; CMOS technology; Circuit synthesis; Differential amplifiers; MOS devices; Power dissipation; Random access memory; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Design: VLSI in Computers and Processors, 1989. ICCD '89. Proceedings., 1989 IEEE International Conference on

Conference_Location

Cambridge, MA

Print_ISBN

0-8186-1971-6

Type

conf

DOI

10.1109/ICCD.1989.63378

Filename

63378