MOS varactors with ferroelectric films

Author

Gevorgian, S. ; Abadei, S. ; Berg, Heikki ; Jacobsson, H.

Author_Institution

Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

2

fYear

2001

fDate

20-24 May 2001

Firstpage

1195

Abstract

The microwave performance of MOS varactors with additional ferroelectric film (MFOS) is presented. The tunability of MFOS varactors above 20 GHz is more than 10% higher than that of simple MOS varactors, with sufficiently high Q factor. The proposed MFOS varactor has a simple design and is compatible with standard CMOS processes. It may have symmetric C-V curves at rather high tuning voltages and superior performance at millimetre wave frequencies. In experiments varactors are based on NaNbO/sub 3/ films grown on high resistivity silicon substrates.

Keywords

MOS capacitors; Q-factor; ferroelectric capacitors; ferroelectric thin films; microwave diodes; sodium compounds; tuning; varactors; 10 to 20 GHz; 40 GHz; MFOS varactors; MOS varactors; NaNbO/sub 3/; NaNbO/sub 3/ films; Q factor; Si; ferroelectric films; high resistivity silicon substrates; high tuning voltage; microwave performance; millimetre wave frequencies; standard CMOS process compatibility; symmetric C-V curves; tunability; CMOS process; Capacitance-voltage characteristics; Conductivity; Ferroelectric films; Frequency; Q factor; Semiconductor films; Tuning; Varactors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967106

Filename

967106