Correlation between static and dynamic SOA (energy capability) of RESURF LDMOS devices in smart power technologies

Author

Khemka, V. ; Parthasarathy, V. ; Zhu, R. ; Bose, A.

Author_Institution

Semicond. Products Sector, Motorola Inc., Mesa, AZ, USA

fYear

2002

fDate

2002

Firstpage

125

Lastpage

128

Abstract

In this paper, we demonstrate the correlation between small area device static SOA and large area device pulsed SOA for single and double RESURF LDMOS configurations. We also elucidate the thermal and electrical limitations to the dynamic SOA of large area devices through measurements and transient electrothermal simulations and demonstrate a significant improvement in the large area dynamic SOA for a previously reported double RESURF technique which realizes an excellent R_dson-BV_dss trade-off. An analytical model is described which is capable of predicting energy capability of these devices for different device size and geometry.

Keywords

MOS integrated circuits; MOSFET; integrated circuit measurement; integrated circuit reliability; power integrated circuits; RESURF LDMOS devices; analytical model; device geometry; device measurements; device size; dynamic SOA; electrical limitations; energy capability; safe operating area; smart power technologies; static SOA; thermal limitations; transient electrothermal simulations; Analytical models; Area measurement; Automotive applications; Electric variables measurement; Electrothermal effects; Geometry; MOSFETs; Physics; Semiconductor optical amplifiers; Vehicle dynamics;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

Print_ISBN

0-7803-7318-9

Type

conf

DOI

10.1109/ISPSD.2002.1016187

Filename

1016187