DocumentCode
1925594
Title
Defect-less trench filling of epitaxial Si growth by H2 annealing
Author
Yamauchi, Shoichi ; Urakami, Yasushi ; Tuji, Nobuhiro ; Yamaguchi, Hitoshi
Author_Institution
Res. Labs., Denso Corp., Aichi, Japan
fYear
2002
fDate
2002
Firstpage
133
Lastpage
136
Abstract
A new trench filling epitaxial Si growth process is proposed for the high aspect ratio doped region. Pre-H2-annealing treatment before filling epitaxial growth realizes the prevention of the crystal defects in the filling epitaxial layer. After filling epitaxial growth, the sequential processes, i.e., HCl etching, refilling epitaxial growth and post-H2-annealing, make a trench filling. The fabricated doped region has a high aspect shape (width: 3.0 μm, depth: 32 μm, aspect ratio: 10.7), which has been investigated by the cross-sectional SCM observation.
Keywords
elemental semiconductors; etching; power MOSFET; rapid thermal annealing; scanning probe microscopy; semiconductor growth; silicon; vapour phase epitaxial growth; 3.0 micron; 32 micron; LP-CVD; Si; annealing; aspect shape; cross-sectional SCM observation; defect-less trench filling; epitaxial growth process; etching; high aspect ratio doped region; power MOSFETs; scanning capacitance microscopy; sequential processes; Annealing; Epitaxial growth; Epitaxial layers; Etching; Filling; Fluid flow; Hydrogen; Rough surfaces; Scanning electron microscopy; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN
0-7803-7318-9
Type
conf
DOI
10.1109/ISPSD.2002.1016189
Filename
1016189
Link To Document