Highly reliable LDMOSFETs employing uneven racetrack sources for PDP driver applications

Author

Roh, Tae Moon ; Lee, Dae Woo ; Koo, Jin Gun ; Kim, Sang-Gi ; Park, II-Yong ; Kim, Jongdae ; Cho, Kyoung-Ik

Author_Institution

Basic Res. Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea

fYear

2002

fDate

2002

Firstpage

153

Lastpage

156

Abstract

The electrical characteristics of n-LDMOSFETs with uneven racetrack source (URS) and conventional racetrack source (CRS) before and after electrical DC stress were investigated to improve hot carrier immunity for PDP driver. The breakdown voltage of n-LDMOSFET with URS is improved by 15% as compared to that of n-LDMOSFET with CRS at on-state. The decrease of threshold voltage (V_t) and maximum transconductance (g_mmax) of n-LDMOSFET with URS after electrical DC stress are about 10 times lower than those of n-LDMOSFET with CRS. The variation of specific on-resistance (R_on) of n-LDMOSFET with URS after DC stress is much lower than that of n-LDMOSFET with CRS.

Keywords

MOS integrated circuits; driver circuits; hot carriers; plasma displays; power MOSFET; power integrated circuits; semiconductor device breakdown; semiconductor device reliability; CRS; LDMOSFETs; PDP driver applications; URS; breakdown voltage; conventional racetrack source; electrical DC stress; electrical characteristics; hot carrier immunity; maximum transconductance; reliability; specific on-resistance; threshold voltage; uneven racetrack sources; Current density; Degradation; Driver circuits; Electric variables; Hot carriers; Laboratories; Moon; Stress; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

Print_ISBN

0-7803-7318-9

Type

conf

DOI

10.1109/ISPSD.2002.1016194

Filename

1016194