DocumentCode :
1925728
Title :
Enhancement of Mobility In Pseudomorphic FETs with up and down Monolayers
Author :
Goronkin, H. ; Tehrani, S. ; Droopad, R. ; Maracas, G.N. ; J.Shen ; Legge, R.N. ; X.T.Zhu
Author_Institution :
Motorola Inc., Phoenix Corporate Research Laboratories, AZ
fYear :
1991
fDate :
17-19 June 1991
Keywords :
Carrier confinement; Electrons; Energy states; FETs; Gallium arsenide; Laboratories; Photonic band gap; Potential well; Stationary state; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
Type :
conf
DOI :
10.1109/DRC.1991.664692
Filename :
664692
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1925728
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