Switching performance of low-voltage N-channel trench MOSFETs

Author

Hueting, R.J.E. ; Hijzen, E.A. ; Ludikhuize, A.W. ; ´t Zandt, M.A.A.

Author_Institution

Philips Res. Leuven, Belgium

fYear

2002

fDate

2002

Firstpage

177

Lastpage

180

Abstract

Guidelines for optimising the switching behaviour of low-voltage (LV) n-channel trench MOSFETs are presented, with emphasis on the geometry and the doping profile. In our optimisation we focussed on three parameters: the specific on-resistance (R_ds,on), the gate-drain charge density (Q_gd) and the off-state breakdown voltage. We obtained by simulations for the 30 V control switch an R_ds,on of less than 10 mΩ.mm² and an R_ds,on·Q_gd of less than 15 mΩ.nC (applied voltage V_dd=12 V). The result is a stripe cell structure with a trench width of 0.15 μm, a cell pitch of 1.0 μm. For the 25 V synchronous rectifier we obtained in the same feature size figures-of-merit of 5 mΩ.mm² and 17 mΩ.nC.

Keywords

MOSFET; doping profiles; semiconductor device breakdown; semiconductor device reliability; semiconductor switches; solid-state rectifiers; 0.15 micron; 1.0 micron; 12 V; 25 V; 30 V; cell pitch; doping profile; figures-of-merit; gate-drain charge density; geometry; low-voltage N-channel trench MOSFETs; off-state breakdown voltage; specific on-resistance; stripe cell structure; switching performance; synchronous rectifier; trench width; Circuit testing; Doping profiles; Geometry; Guidelines; MOSFETs; Microprocessors; Rectifiers; Switches; Temperature; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

Print_ISBN

0-7803-7318-9

Type

conf

DOI

10.1109/ISPSD.2002.1016200

Filename

1016200