Title :
The MOS controlled super junction transistor (SJBT): a new, highly efficient, high power semiconductor device for medium to high voltage applications
Author :
Bauer, Friedhelm
Author_Institution :
Corporate Res., ABB Switzerland Ltd., Baden-Dattwil, Switzerland
Abstract :
The paper presents a new MOS controlled silicon power device with columnar super junction structures. The super junction bipolar transistor (SJBT) is an extension of the super junction MOSFET principle: due to it´s p-emitter at the anode the device is bipolar in nature albeit with substantially different characteristics as compared to an IGBT. It´s electrical performance rivals advanced trench IGBTs.
Keywords :
doping profiles; elemental semiconductors; power bipolar transistors; semiconductor device models; silicon; MOS controlled super junction transistor; SJBT; columnar super junction structures; electrical performance; high power semiconductor device; high voltage applications; medium voltage applications; p-emitter; Anodes; Bipolar transistors; Breakdown voltage; Charge carrier density; Insulated gate bipolar transistors; MOSFET circuits; Numerical simulation; Power MOSFET; Silicon; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016205
