Title :
A 200-300 GHz SIS mixer-preamplifier with 8 GHz IF bandwidth
Author :
Lauria, E.F. ; Kerr, A.R. ; Pospieszalski, M.W. ; Pan, S.-K. ; Effland, J.E. ; Lichtenberger, Arthur W.
Author_Institution :
Nat. Radio Astron. Obs., Charlottesville, VA, USA
Abstract :
A 200-300 GHz SIS mixer-preamplifier with an IF bandwidth of 8 GHz Is described. The mixer uses Nb/Al-oxide/Nb tunnel junctions in a circuit with low IF capacitance and inductance. The mixer block is designed to mount directly on the body of the 4-12 GHz InP HFET preamplifier and mixer bias is provided through the input circuit of the preamplifier. At a LO frequency of 230 GHz, the mixer-preamp gain is 30-35 dB, and the DSB receiver noise temperature is 45-57 K across the whole IF band. This is the largest instantaneous bandwidth reported to date for an SIS receiver.
Keywords :
aluminium compounds; heterodyne detection; millimetre wave circuits; millimetre wave mixers; niobium; superconductor-insulator-superconductor mixers; 200 to 300 GHz; 30 to 35 dB; 8 GHz; DSB receiver noise; HFET preamplifier; IF bandwidth; IF capacitance; IF inductance; Nb-AlO-Nb; SIS mixer-preamplifier; input circuit; instantaneous bandwidth; mixer bias; mixer-preamp gain; Bandwidth; Capacitance; Circuits; Frequency; HEMTs; Indium phosphide; Inductance; MODFETs; Niobium; Preamplifiers;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967220
