Title :
An I-Q mixer at 76.5 GHz using flip-chip mounted silicon Schottky diodes
Author :
Kaleja, M.M. ; Herb, A.J. ; Rasshofer, R.H. ; Biebl, E.M.
Author_Institution :
Fachgebiet Hochstfrequenztech., Tech. Univ. Munchen, Germany
Abstract :
Silicon Schottky diodes show the advantages of low 1/f noise combined with low cost. We use these diodes in hybrid flip-chip configuration to build a novel I-Q mixer at 76.5 GHz for automotive applications. The realized mixer shows promising features such as 10 dB conversion loss @ 100 kHz IF, LO-to-RF isolation better than 25 dB, and average IF noise power of -80 dBm.
Keywords :
1/f noise; Schottky diode mixers; automotive electronics; elemental semiconductors; flip-chip devices; millimetre wave diodes; millimetre wave mixers; silicon; 1/f noise; 10 dB; 76.5 GHz; I-Q mixer; IF noise power; LO-to-RF isolation; Si; automotive electronics; conversion loss; hybrid flip-chip mounting; silicon Schottky diode; Automotive engineering; Costs; Gallium arsenide; Manufacturing; Packaging; Passive circuits; Radar; Schottky diodes; Silicon; Vehicles;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967222
