Title :
185 GHz monolithic amplifier in InGaAs-InAlAs transferred-substrate HBT technology
Author :
Urteaga, M. ; Scott, D. ; Mathew, T. ; Krishnan, S. ; Wei, Y. ; Rodwell, M.J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We report a single-stage tuned amplifier that exhibits a peak small signal gain of 3.0 dB at 185 GHz. To the best of our knowledge, this is the first reported HBT result for a tuned amplifier at this frequency, and the gain-per-stage compares favorably with results from HEMT technologies. The amplifier was designed in a transferred-substrate HBT technology that has exhibited record values of extrapolated f/sub max/ (>1 THz).
Keywords :
III-V semiconductors; aluminium compounds; bipolar MIMIC; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit design; millimetre wave amplifiers; 185 GHz; 3 dB; EHF; InGaAs-InAlAs; InGaAs/InAlAs HBT technology; MM-wave IC; fabrication process; monolithic amplifier; single-stage tuned amplifier; transferred-substrate HBT technology; Broadband amplifiers; Electron beams; Frequency; Gain; HEMTs; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Power amplifiers; Substrates;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967236
