• DocumentCode
    1929267
  • Title

    Diffusion of Boron in Polycrystalline Silicon

  • Author

    Nédélec, S. ; Mathiot, D. ; Gauneau, M.

  • Author_Institution
    France Télécom - CNET Grenoble, BP 98, 38243 Meylan Cedex, France; SGS THOMSON Microelectronics, BP 16, 38921 Crolles Cedex, France
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    153
  • Lastpage
    156
  • Abstract
    The diffusion of boron in polycrystalline silicon films has been studied over the 700-1000°C temperature range for two different grain sizes and doses. Secondary Ion Mass Spectroscopy was used to measure the concentration profiles after ion implantation and after annealing steps. By fitting experimental and simulated profiles we are able to extract for boron both diffusivity in grain boundaries and segregation coefficient between grain boundary and grain.
  • Keywords
    Annealing; Boron; CMOS technology; Fabrication; Grain boundaries; Mass spectroscopy; Performance evaluation; Silicon; Storms; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436206
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1929267