• DocumentCode
    1930004
  • Title

    Electrical and Reliability Characteristics of Submicron Nmosfet´s with Oxynitride Gate Dielectric Prepared by Rapid Thermal Oxidation in N/sub 2/O

  • Author

    Hytmsang Hwang ; Wenchi Ting ; Dim-Lee Kwong ; Jack Lee

  • Author_Institution
    Microelectronics Research Center, The University of Texas at Austin
  • fYear
    1991
  • fDate
    17-19 June 1991
  • Keywords
    Degradation; Dielectrics; Electron devices; Hot carriers; Interface states; Leakage current; MOSFET circuits; Stress control; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1991. 49th Annual
  • Conference_Location
    Boulder, CO, USA
  • Print_ISBN
    0-87942-647-0
  • Type

    conf

  • DOI
    10.1109/DRC.1991.664712
  • Filename
    664712
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1930004