Title :
Evaluation of 600 V cascode GaN HEMT in device characterization and all-GaN-based LLC resonant converter
Author :
Weimin Zhang ; Zhuxian Xu ; Zheyu Zhang ; Wang, F. ; Tolbert, Leon M. ; Blalock, Benjamin J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA
Abstract :
In recent years, Si power MOSFET is approaching its performance limits, and Gallium Nitride (GaN) HEMT is getting mature. This paper evaluates the 600 V cascode GaN HEMT performance, and compares it with the state-of-the-art Si CoolMOS in LLC resonant converter. First, the static characterization of 600 V cascode GaN HEMT is described in different temperatures. The switching performance is tested by a double pulse tester to provide the turn-off loss reference to the design of LLC resonant converter. Second, a 400 V-12 V/300 W/1 MHz all-GaN-based converter with the 600 V cascode GaN HEMT is compared with a Si-based converter with the 600 V Si CoolMOS. The device output capacitance is a key factor in the design and loss analysis of LLC resonant converter. The design results show that the total GaN device loss of the all-GaN-based converter can be improved by 42% compared with the total Si device loss. Finally, both 400 V-12 V/300 W/1 MHz Si-based and GaN-based LLC resonant converter prototypes are tested and compared with waveforms and efficiency curves.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; resonant power convertors; switching convertors; wide band gap semiconductors; GaN; HEMT evaluation; all-GaN-based LLC resonant converter design; cascode GaN HEMT performance; device characterization; device output capacitance; double pulse tester; frequency 1 MHz; loss analysis; power 300 W; silicon CoolMOS; silicon power MOSFET; switching performance; turn-off loss reference; voltage 12 V; voltage 600 V; Capacitance; Gallium nitride; HEMTs; Logic gates; MOSFET; Silicon; Switches;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2013 IEEE
Conference_Location :
Denver, CO
DOI :
10.1109/ECCE.2013.6647171