Title :
The optoelectronic properties of silicon nanostructures: the role of the interfaces
Author :
Ossicini, Stefano
Author_Institution :
Ist. Nazionale per la Fisica della Materia, Universita di Modena e Reggio Emilia, Italy
Abstract :
The optoelectronic properties of Si nanostructures are studied ab initio to investigate their dependence on the dimensions, on the symmetry and on the bonding situations at the interfaces. We find that the dimensions are significative for the transition oscillator strengths and that the symmetry of the lattice changes the nature of the gap. The saturating species and/or the presence of dangling bonds play an important role in the formation of interface states that can occupy or leave free the band gap so making worse or improving the optical properties
Keywords :
ab initio calculations; bonds (chemical); dangling bonds; elemental semiconductors; energy gap; interface states; nanostructured materials; oscillator strengths; silicon; Si; ab initio model; band gap; dangling bonds; interface bonding; interface states; lattice symmetry; optoelectronic properties; silicon nanostructure; transition oscillator strength; Bonding; Interface states; Lattices; Nanostructures; Optical saturation; Oscillators; Photonic band gap; Radiative recombination; Silicon; Stimulated emission;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967409
