• DocumentCode
    1931981
  • Title

    BASIC II: a super self-aligned technology for high-performance bipolar applications

  • Author

    Pruijmboom, A. ; Jansen, A.C.L. ; Maas, H.G.R. ; Kranen, P.H. ; van Es, R.A. ; Dekker, R. ; van der Velden, J.W.A.

  • Author_Institution
    Philips Research Laboratories, P. O. Box 80.000, Eindhoven, The Netherlands.
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    389
  • Lastpage
    392
  • Abstract
    A super selfaligned technology is described in this paper, resulting in a sidewall contacted structure. A strongly reduced sidewall base contact dimension of ca. 0.1 ¿m has been achieved by implementing a novel polysilicon planarisation technology. fT and fmax of 17 and 15 GHz have been measured for a BASIC-II npn transistor with a 1.5×58 ¿m2 emitter (at Vcb=2 V) which represents a 20-50% increase over conventional BASIC technology.
  • Keywords
    Boron; Capacitance measurement; Current measurement; Etching; Fluid flow measurement; Gain measurement; Laboratories; Measurement standards; Planarization; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436334
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1931981