Silicon-based pseudo-heterojunction bipolar transistors

The structure for a silicon pseudo-heterojunction device incorporating a low-doped emitter region is described. The emitter and base delay and current gain of these devices is calculated and compared to conventional devices. ECL propagation delays are also calculated, and predicted to be 21 ps, compared with 30 ps for the equivalent circuit incorporating conventional silicon devices. Finally, results from fabricated devices, are presented.