Title :
Quantum-confined Stark effect on Landau levels in GaAs low-dimensional systems
Author :
Niculescu, Ecaterina C.
Author_Institution :
Dept. of Phys., Politehnic Univ. of Bucharest, Romania
Abstract :
We consider the electronic structure of the cylindrical pills of GaAs low-dimensional systems in an unusual field regime, namely, in the presence of an electric field in radial direction and a crossed magnetic field applied in the axial direction. Effects of the competition between the magnetic radial confinement and the electric field induced polarization on the el-hhl transition energy are studied in detail. The results show that the energies of electron and hole states depend sensitively on the dot radius and the relative magnitude of the electric field to the magnetic field. These aspects must be taken into account in the understanding of optical phenomena related to energy spectrum of the carriers in the presence of the external fields and the designing materials and devices in low-dimensional systems
Keywords :
III-V semiconductors; Landau levels; effective mass; gallium arsenide; quantum confined Stark effect; semiconductor quantum dots; variational techniques; GaAs; Landau levels; axial direction; confinement energy; crossed magnetic field; cylindrical pills; dot radius; effective-mass; electric induced polarization; electron states; electronic structure; ground state energy; hole states; low-dimensional systems; magnetic radial confinement; quantum-confined Stark effect; radial direction electric field; single-particle states; variational procedure; Charge carrier processes; Electron optics; Gallium arsenide; Magnetic confinement; Magnetic fields; Optical design; Optical devices; Optical polarization; Optical sensors; Stark effect;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967422