DocumentCode
1933128
Title
Monte Carlo simulation of velocity modulation transistors
Author
Sampedro, C. ; Godoy, A. ; Gámiz, F. ; Roldán, J.B. ; Carceller, J.E. ; Cartujo, P.
Author_Institution
Dept. de Electronica y Tecnologia de Computadores, Univ. de Granada, Spain
fYear
2005
fDate
2-4 Feb. 2005
Firstpage
377
Lastpage
380
Abstract
An ensemble Monte Carlo simulator has been developed to study the possibility that double gate silicon on insulator (DGSOI) transistor could operate as a velocity modulation transistor (VMT). Stationary and transient behaviors have been analyzed. As the main goal of this work, the authors have focused on the time necessary to transfer the charge from one channel to the other since this time will determine the frequency range of operation of the device.
Keywords
MOSFET; Monte Carlo methods; carrier mobility; circuit simulation; modulation; silicon-on-insulator; Monte Carlo simulation; double gate silicon on insulator; stationary behaviors; transient behaviors; velocity modulation transistors; Computational modeling; Degradation; Electron mobility; FETs; Frequency; MOSFET circuits; Monte Carlo methods; Silicon on insulator technology; Switches; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2005 Spanish Conference on
Conference_Location
Tarragona
Print_ISBN
0-7803-8810-0
Type
conf
DOI
10.1109/SCED.2005.1504409
Filename
1504409
Link To Document