Title :
On the Investigation of Degradation Mechanisms in Ultra-High Performance Gaas Heterojunction Bipolar Transistors
Author :
Yang-Hua Chang ; Li, G.P. ; Oki, A.K. ; Streit, D. ; Hafizi, M.E. ; Kim, M.E.
Author_Institution :
Department of Electrical and Computer Engineering, University of California
Keywords :
Bipolar transistors; Current measurement; Degradation; Electrical resistance measurement; Gallium arsenide; Heterojunction bipolar transistors; Space technology; Stress; Temperature measurement; Tunneling;
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
DOI :
10.1109/DRC.1991.664724
