DocumentCode :
1933181
Title :
MOS resistor modelling for linearity simulation and applications
Author :
Sanz, M.T. ; Alegre, J.P. ; Calvo, B. ; Celma, S.
Author_Institution :
Univ. de Zaragoza, Electron. Design Group, Zaragoza, Spain
fYear :
2005
fDate :
2-4 Feb. 2005
Firstpage :
381
Lastpage :
384
Abstract :
The aim of this work was to carry out a comparative study of two ideally linear configurations: a MOS resistive circuit (MRC), widely employed in the literature, and a MOS current divider (MCD) based on a linear current division principle. The suitability of some MOS models for distortion simulation purposes is discussed. The general charge-sheet model is used to perform simulations in the MATLAB environment. The harmonic distortion terms are calculated by means of the FFT and the influence of mismatches on the linearity of both cells was estimated. As application, programmable gain amplifiers (PGAs) based on the MRC and the MCD were introduced and their performance in terms of linearity and accuracy was studied and compared.
Keywords :
MOS analogue integrated circuits; continuous time filters; distortion measurement; fast Fourier transforms; harmonic distortion; mathematics computing; semiconductor device models; FFT; MATLAB; MOS current divider; MOS resistive circuit; MOS resistor modelling; distortion simulation; harmonic distortion; linear configurations; linear current division; linearity simulation; programmable gain amplifiers; Circuit simulation; Electronics packaging; Harmonic distortion; Linearity; MATLAB; MOSFETs; Mathematical model; Performance gain; Resistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Conference_Location :
Tarragona
Print_ISBN :
0-7803-8810-0
Type :
conf
DOI :
10.1109/SCED.2005.1504410
Filename :
1504410
Link To Document :
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