• DocumentCode
    1933210
  • Title

    Microwave HBT fabrication by using a self-aligned technology with a perpendicular side-wall

  • Author

    Chen, Xiaojian ; Wu, Ymg

  • Author_Institution
    Nanjing Electronic Devices Institute, P.O. Box 1601, Nanjing, PRC
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    29
  • Lastpage
    32
  • Abstract
    A HBT self-aligned technology with a perpendicular side-wall mesa has been adopted in microwave HBT fabrication by virtue of a high selectivity chemical wet etchant. Principal features and technological processes of the method are discussed. The gap of ~0.1¿m between the emitter mesa edge and base contact metallization edge has been formed repeatedly by the method. The experimental results of the developed microwave HBT for test purpose is given.
  • Keywords
    Chemical technology; Contact resistance; Dielectric films; Fabrication; Frequency; Heterojunction bipolar transistors; Metallization; Microwave devices; Microwave technology; Microwave theory and techniques;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436389
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1933210