• DocumentCode
    1933252
  • Title

    Modelling the parasitic effects in GaAs/GaAlAs heterojunction bipolar transistors

  • Author

    Dungla, J. ; Filoche, M. ; Koncyzkowska, A. ; Caquot, E.

  • Author_Institution
    Centre National d´´Etudes des Télécommunications, Laboratoire de Bagneux 196, rue H. Ravera, 92220 BAGNEUX, FRANCE
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    21
  • Lastpage
    24
  • Abstract
    A modelling approach and an experimental characterization of various GaAs/GaAlAs HBT parasitic effects are presented. They include the emitter base offset voltage, resistance effects, recombination currents and the outdiffusion of the p-dopant.
  • Keywords
    Bipolar transistors; Contact resistance; Doping; Equations; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; Logic devices; Thermal resistance; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436391
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1933252