SiC power Schottky diodes: industrial development

Author

Badila, Marian ; Brezeanu, Gheorghe ; Banu, Viorel ; Godignon, Philippe ; Millan, Jose ; Jorda, Xavier ; Draghici, Florin

Author_Institution

IMT, Bucharest, Romania

Volume

2

fYear

2001

fDate

37165

Firstpage

337

Abstract

The paper describes the results obtained in a trial of the industrial fabrication of silicon carbide power Schottky diodes. The structure technology uses the simple ramp oxide edge termination to minimize field crowding at the edge of the metal contact and high temperature metal annealing to reduce the specific metal-semiconductor resistance. By optimising the Schottky barrier the best diode results obtained for a 10¹⁶ cm^-3, 3 μm thickness 4H n-SiC epilayer are: 3.7 V forward voltage drop at 1000 A/cm², and a 35 μA/cm² at an 100 V reverse voltage while the maximum breakdown voltage was around of 300 V

Keywords

Schottky diodes; annealing; contact resistance; power semiconductor diodes; semiconductor device breakdown; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; 100 V; 3 micron; 300 V; 4H n-SiC epilayer; Schottky barrier; SiC; SiC power Schottky diodes; field crowding; forward voltage drop; high temperature metal annealing; industrial development; industrial fabrication; maximum breakdown voltage; ramp oxide edge termination; reverse voltage; specific metal-semiconductor resistance; structure technology; Annealing; Breakdown voltage; Contact resistance; Electrical resistance measurement; Fabrication; Schottky barriers; Schottky diodes; Silicon carbide; Temperature; Textile industry;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2001. CAS 2001 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-6666-2

Type

conf

DOI

10.1109/SMICND.2001.967478

Filename

967478