Title :
Analytical model for circuit simulation with quarter micron MOSFETs: subthreshold characteristics
Author :
Miura-Mattausch, M. ; Jacobs, H.
Author_Institution :
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, Munich 83
Abstract :
We show a new simple model which includes the gradient of the lateral electric field analytically. The model describes the subthreshold characteristics relating to short-channel effects correctly down to 0.1 ¿m. effective channel length Leff with physical parameters (Nsub, Cox, Vfb, ¿f)taken from the long-channel device.
Keywords :
Analytical models; Charge measurement; Circuit simulation; Current measurement; Density measurement; Electric variables measurement; MOSFETs; Poisson equations; Position measurement; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
