Title :
The research on mm-wave power amplifier MMIC
Author :
Zhang, Bin ; Bai, Song
Author_Institution :
Sci. & Technol. on Monolithic Integrated Circuits & Modules Lab., Nanjing Electron. Devices Inst., Nanjing, China
Abstract :
In this paper, we analyzed the technology of mm-wave power amplifier MMIC. We developed mm-wave GaAs pHEMT with a power density of 0.6W/mm at 35GHz. A fully monolithic 4-stage 4W mm-wave power amplifier was designed and fabricated The MMIC has an 8.96mm gate periphery on the output stage. Performance achieved was 24dB gain from 33-37GHz with a peak power of >;4. 5W and PAE of 23%.
Keywords :
MMIC power amplifiers; millimetre wave power amplifiers; GaAs; frequency 33 GHz to 37 GHz; frequency 35 GHz; mm-wave power amplifier MMIC; size 8.96 mm; Gallium arsenide; Logic gates; MMICs; PHEMTs; Performance evaluation; Power amplifiers; Power generation; MMIC; Millimeter Wave; Power Amplifier;
Conference_Titel :
Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4673-0901-1
Electronic_ISBN :
978-1-4673-0903-5
DOI :
10.1109/IMWS2.2012.6338210
