Title :
3-D Simulation of Parasitic Mosfet Effects for Box Isolation Technologies
Author :
Heiser, G. ; Noell, M. ; Peon, S. ; Orlowski, M.
Author_Institution :
Motorola, Inc., APRDL, Austin, Texas
Keywords :
CMOS technology; Doping; Electrons; Fabrication; Insulation; Isolation technology; MOSFET circuits; Silicon; Threshold voltage; Very large scale integration;
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
DOI :
10.1109/DRC.1991.664729
