DocumentCode
1935570
Title
Over-estimate of Thin Dielectric Lifetime in Single Doping Type Poly-Gate Capacitors
Author
Wang, S.J. ; Chen, I.C. ; Tigelaar, H.L.
Author_Institution
Semiconductor Process and Design Center, Texas Instruments
fYear
1991
fDate
17-19 June 1991
Keywords
Breakdown voltage; CMOS technology; Capacitors; Dielectrics; Extrapolation; Life estimation; Life testing; Lifetime estimation; Semiconductor device doping; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1991. 49th Annual
Conference_Location
Boulder, CO, USA
Print_ISBN
0-87942-647-0
Type
conf
DOI
10.1109/DRC.1991.664733
Filename
664733
Link To Document