Investigation of high field effects in SiC films

Author

Sudarshan, Tangali S. ; Nunnally, W.C. ; Manriquez, A. ; Gradinaru, G.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of South Carolina, Columbia, SC, USA

fYear

1993

fDate

7-9 June 1993

Firstpage

159

Abstract

Summary form only given. A focused research program on the high-field properties of SiC is being carried out. Prebreakdown and breakdown phenomena are studied. Surface flashover, a major limitation of PC switches with classical semiconductors (Si and GaAs), is investigated. The influence of the ambient dielectric quality and system configuration on the prebreakdown and breakdown response of the system is studied. The device characteristics and limits of operation at high voltages are analyzed using a time-coordinated nanosecond diagnostics to monitor the applied voltage and the device current. Optical emission signals from UV to IR range using (photomultiplier tubes) and spatially resolved digital imaging of light emission using an intensified, gatable CCD (charge coupled device) camera have been considered.

Keywords

silicon compounds; GaAs; PC switches; Si; SiC films; breakdown phenomena; classical semiconductors; device current; gatable charged coupled device; high field effects; high voltages; light emission; optical emission signals; photomultiplier tubes; prebreakdown phenomena; spatially resolved digital imaging; surface flashover; time-coordinated nanosecond diagnostics; Charge-coupled image sensors; Dielectric breakdown; Electric breakdown; Flashover; Gallium arsenide; Nanoscale devices; Semiconductor films; Silicon carbide; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 1993. IEEE Conference Record - Abstracts., 1993 IEEE International Conference on

Conference_Location

Vancouver, BC, Canada

ISSN

0730-9244

Print_ISBN

0-7803-1360-7

Type

conf

DOI

10.1109/PLASMA.1993.593454

Filename

593454