Hot-hole and Electron Effects in Dynamically Stressed n-MOSFETs

Dynamic hot-carrier stresses have been performed with frequency and stress time as parameters. The resulting data show a steeper time dependence than any single static stress. By frequency variations and combinations of static stresses it was found that no transient effects are responsible for it. The results can be explained qualitatively by the subsequent injection of holes and electrons in the dynamic case. This understanding is of great importance for the quality assurance of devices operating in real circuits.