Title :
A 3.3 V front-end receiver GaAs MMIC for the digital/analog dual-mode hand-held phones
Author :
Chung-Hwan Kim ; Min-Gun Kim ; In-Gab Hwang ; Chang-Seok Lee ; Jong-Lam Lee ; Eung-Gie Oh ; Jeon-Wook Yang ; Chul-Soon Park ; Kyung-Sik Yoon ; Kwang-Eui Pyun ; Hyung-Moo Park
Author_Institution :
Semicond. Technol. Div., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
A front-end receiver MMIC for 3.3 V-operating CDMA/AMPS dual-mode hand held phone has been developed using a GaAs MESFET process. The developed MMIC, chip size of which is 1.9/spl times/3.9 mm/sup 2/ shows noise figure of 2.8 dB, power gain of 35/25 dB at the nominal current consumption of 22.5/16.1 mA in CDMA/AMPS modes, respectively.
Keywords :
III-V semiconductors; MESFET integrated circuits; UHF integrated circuits; cellular radio; code division multiple access; cordless telephone systems; digital radio; field effect MMIC; gallium arsenide; radio receivers; 16.1 mA; 2.8 dB; 22.5 mA; 25 dB; 3.3 V; 35 dB; CDMA/AMPS dual-mode operation; GaAs; GaAs MESFET process; UHF IC; digital/analog hand-held phones; front-end receiver MMIC; Circuit simulation; FETs; Gain; Gallium arsenide; Heterojunction bipolar transistors; MESFETs; MMICs; Mobile communication; Multiaccess communication; Switches;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.528960
