DocumentCode :
1936535
Title :
3.4 V operation power amplifier multi-chip IC´s for digital cellular phone
Author :
Hasegawa, Y. ; Ogata, Y. ; Nagasako, I. ; Inosako, K. ; Iwata, N. ; Kanamori, M. ; Itoh, T.
Author_Institution :
Compound Semicond. Device Div., NEC Corp., Kawasaki, Japan
fYear :
1995
fDate :
Oct. 29 1995-Nov. 1 1995
Firstpage :
63
Lastpage :
66
Abstract :
GaAs power multi-chip IC´s (MCIC´s) operating at 3.4 V for digital cellular phone have been successfully developed, employing a double-doped heterojunction FET (HJFET). The MCIC´s can deliver an output power over 31.2 dBm with a power added efficiency of 45% in the frequency range from 940 to 956 MHz, and from 1429 to 1453 MHz, respectively. The MCIC´s have low distortion characteristics, and the adjacent channel interference level of the /spl pi//4-shift QPSK modulation is -50 dBc at the 150 kHz apart from the center frequency. The package size is having a total volume of only 0.4 cc, half of 14.2/spl times/11.2/spl times/2.4 mm that for conventional power amplifier MCIC´s. The MCIC´s will contribute to realization of compact cellular phones.
Keywords :
III-V semiconductors; UHF integrated circuits; UHF power amplifiers; cellular radio; digital radio; gallium arsenide; hybrid integrated circuits; 3.4 V; 45 percent; 940 to 1453 MHz; GaAs; digital cellular phone; double-doped HFET; heterojunction FET; low distortion characteristics; power amplifier multi-chip IC; Cellular phones; Digital integrated circuits; FET integrated circuits; Frequency; Gallium arsenide; Heterojunctions; Interchannel interference; Operational amplifiers; Power amplifiers; Power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
Type :
conf
DOI :
10.1109/GAAS.1995.528962
Filename :
528962
Link To Document :
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